单轴分布式光纤传感器管线泄漏探测方法及定位理论分析

利用Sagnac干涉原理的分布式光纤传感器是一种可用于长途油气管线侵入、泄漏探测和定位的新技术.为了克服屏蔽和隔离Sagnac光纤环中未用作传感的那一半光纤所带来的屏蔽困难、成本增加等问题，提出一种单轴分布式光纤传感器的方法.其原理是利用一条光纤代替光纤环，并在光纤尾端设置法拉第旋转镜，构成偏振无关Sagnac干涉仪探测和定位管线泄漏.文中详细分析和讨论了该方法的系统光路和探测定位原理.     

生物组织电穿孔中的热效应研究

本文对生物组织电穿孔中的热效应问题进行了计算研究。结果表明生物组织电穿孔过程中,选用不当的脉冲电压参数,会对组织造成严重的热损伤。若采用相同的烧伤阈值来描述热损伤范围,则相同电脉冲参数条件下在体组织比离体组织受到的热损伤更大。     

超尺寸物品装箱问题及其算法

本文探讨一类新装箱问题-超尺寸物品装箱问题。针对实际解决该问题的两涉法，我们提出了一个评价效率更高的目标函数，证明了在此目标函数下两步法的渐近最坏比不小于2，并给出了渐近量坏比与拆分次数的关系。最后本文提出了一种不同于两步法的新在线算法MA，证明了在新目标函数下其渐近最坏比不超过7/4。     

V型三能级原子与非经典光场作用中光场特性的变化

研究了V型三能级原子BEC与双模压缩光场相互作用系统中,忽略原子间相互作用和考虑原子间相互作用时光场的正交压缩和光子数压缩。结果表明,光场的正交压缩依赖于压缩参数,而光子数压缩与压缩参数、光场信号强度有关,在一定条件下,两种压缩可同时存在。原子间相互作用影响两种压缩的涨落随时间变化的周期,以及正交分量涨落随时间变化的幅度,而对光子数压缩涨落随时间变化的幅度几乎无影响。     

SEPARATING SCN~- FROM DESULPHURIZATION WASTE SOLUTION OF COCKING PLANT BY D241 RESIN

1. INTRODUCTION In the process of coking plant, about 30%~35% sulfur is transformed to H2S and some other sulfide, which form impurity in coal gas together with NH3 and HCN. Only 0.1% H2S containing in air can lead to die, so it is very important to carry on desulphurization and decyanation with coal gas [1~3]. Currently desulphurization and decyanation craft technique have Dry Oxidation Technology, Wet Oxidation Technology and Liquid Absorption Technology [2] three main kinds. The…     

双色激光场中1维共线氢分子离子的经典动力学研究

 运用经典理论方法，并采用辛算法数值求解了双色激光场作用下1维共线氢分子离子(H₂⁺)的哈密顿正则方程，得到了氢分子离子在激光场下的经典轨迹。计算了单色场和双色场下氢分子离子(H₂⁺)的存活几率、电离几率、解离几率、库仑爆炸几率随时间的演化，分析了双色场的相位、强度、强度比及倍频的变化对氢分子离子动力学行为的影响,并给出了相应的物理解释。     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

Advances in micro-perforated panel absorbers

Theoretical and experimental investigations on the performance of micro-perforated -panel absorbers are reviewed in this paper. By reviewing recent research work, this paper reveals a relationship between the maximum absorption coefficient and the limit of the absorption frequency bandwidth. It has been demonstrated that the absorption frequency bandwidth can be extended up to 3 or 4 octaves as the diameters of the micro-holes decrease. This has become possible with the development of the technologies for manufacturing micro-perforated panels, such as laser drilling, powder metallurgy, welded meshing and electro-etching to form micrometer order holes. In this paper, absorption characteristics of such absorbers in random fields and in high sound intensity are discussed both theoretically and experimentally. A new absorbing structure based on micro-perforated-panel absorbers demonstrate experimentally high sound absorption capability. This review shows that the micro-perforated-panel absorber has potentials to be one of ideal absorbing materials in the 21st century.     

Kthe-Bochner空间的凸性(英文)

本文利用Kothe函数空间的性质以及Kothe函数空间与Kothe-Bochner空间的关系,讨论了Kothe-Bochner空间E(X)的凸性,主要结果如下: (a)给出E(X)的端点的充分条件,得到了E(X)严格凸的判据,相应地推广了Lp(μ,X) 以及Lφ(X)的结果; (b)讨论了E(X)的弱局部一致凸和局部完全k-凸; (c)刻画了E(X)的强凸,给出了F(X)强凸的充要条件．     

为实现准等熵压缩的波阻抗梯度飞片的实验研究

采用粉末冶金方法,制备出波阻抗沿厚度方向呈特定分布的WMoTi体系梯度飞片,在二级轻气炮上进行了梯度飞片击靶实验的初步研究.结果表明,利用梯度飞片可以实现对靶样品的准等熵压缩,击靶后产生的波阵面是平缓、连续上升的,明显不同于冲击压缩的陡峭波阵面,靶面压力峰值最高达到了167GPa.波阻抗按二次函数分布的梯度飞片能够获得最佳的击靶波形 关键词： 波阻抗梯度飞片 准等熵压缩